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 CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C223N3-H Issued Date : 2004.03.03
Revised Date : Page No. : 1/4
BTN8050N3
Description
The BTN8050N3 is designed for general purpose low frequency amplifier applications.
Features
* High collector current , IC = 0.8A * Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA * Complementary to BTP8550N3.
Symbol
BTN8050N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
VCBO VCEO VEBO IC ICP Pd Tj Tstg
Limits
30 20 5 800 1.5 (Note) 225 150 -55~+150
Unit
V V V mA A W C C
BTN8050N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 VBE(on) *hFE 1 *hFE 2 fT Cob Min. 30 20 5 100 80 Typ. 150 15 Max. 100 100 0.3 0.4 1 500 Unit V V V nA nA V V V MHz pF
Spec. No. : C223N3-H Issued Date : 2004.03.03
Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=400mA, IB=20mA IC=800mA, IB=80mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=2V, IC=800mA VCE=5V, IC=50mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE 1
Rank Range C 100~200 D 150~300 E 250~500
BTN8050N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
VCE = 5V
Spec. No. : C223N3-H Issued Date : 2004.03.03
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
Current Gain---HFE
100
VCE(SAT) @ IC=20IB
100
VCE = 2V VCE = 1V
10
VCE(SAT) @ IC=10IB
10 1 10 100 1000 Collector Current---IC(mA) 10000
1 1 10 100 1000 Collector Current---IC(mA) 10000
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Voltage vs Collector Current
1000
On Voltage---(mV)
VBE(ON) @ VCE=1V
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
100 1 10 100 1000 Collector Current---IC(mA) 10000
Power Derating Curve
250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA() 200
BTN8050N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C223N3-H Issued Date : 2004.03.03
Revised Date : Page No. : 4/4
A L
Marking:
3 B 1 2 S
TE D9
V
G
C D K
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 H J Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN8050N3
CYStek Product Specification


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